issue 1 - february 2007 1 www.zetex.com ? zetex semiconductors plc 2007 ZXTN19020CFF 20v, sot23f, npn high gain power transistor summary bv cex > 65v bv ceo > 20v bv eco > 4.5v i c(cont) = 7a v ce(sat) < 30mv @ 1a r ce(sat) = 18m p d = 1.5w complementary part number zxtp19020cff description advanced process capability has been used to maximize the performance of this transistor. the sot23f package is compatible with the industry standard sot23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. features ? very low saturation voltage ?high gain ? high forward blocking voltage ? low profile high dissipation package applications ? mosfet and igbt gate driving ? led driving ?strobe flash ? motor drive ?micro buffers ordering information device marking 1e2 device reel size (inches) tape width (mm) quantity per reel ZXTN19020CFFta 7 8 3000 c e b c e b pinout - top view
ZXTN19020CFF issue 1 - february 2007 2 www.zetex.com ? zetex semiconductors plc 2007 absolute maximum ratings notes: (a) for a device surface mounted on 15mm x 15mm x 1.6mm fr 4 pcb with high coverage of single sided 1oz copper, in still air conditions. (b) mounted on 25mm x 25mm x 1.6mm fr4 pcb with a high coverage of single sided 2 oz copper in still air conditions. (c) mounted on 50mm x 50mm x 1.6mm fr4 pcb with a high coverage of single sided 2 oz copper in still air conditions. (d) as (c) above measured at t<5secs. parameter symbol limit unit collector-base voltage v cbo 65 v collector-emitter voltage (forward blocking) v cex 65 v collector-emitter voltage (base open) v ceo 20 v emitter-collector voltage (reverse blocking) v eco 4.5 v emitter-base voltage v ebo 7v continuous collector current (c) i c 7a base current i b 1a peak pulse current i cm 15 a power dissipation at t amb =25c (a) p d 0.84 w linear derating factor 6.72 mw/c power dissipation at t amb =25c (b) p d 1.34 w linear derating factor 10.72 mw/c power dissipation at t amb =25c (c) p d 1.5 w linear derating factor 12.0 mw/c power dissipation at t amb =25c (d) p d 2.0 w linear derating factor 16.0 mw/c operating and storage temperature range t j , t stg - 55 to 150 c thermal resistance parameter symbol limit unit junction to ambient (a) r ja 149.3 c/w junction to ambient (b) r ja 93.4 c/w junction to ambient (c) r ja 83.3 c/w junction to ambient (d) r ja 60 c/w
ZXTN19020CFF issue 1 - february 2007 3 www.zetex.com ? zetex semiconductors plc 2007 characteristics
ZXTN19020CFF issue 1 - february 2007 4 www.zetex.com ? zetex semiconductors plc 2007 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions collector-base breakdown voltage bv cbo 65 85 v i c = 100 a collector-emitter breakdown voltage (forward blocking) bv cex 65 85 v i c = 100 a, r be < 1k or -1v < v be < 0.25v collector-emitter breakdown voltage (base open) bv ceo 20 25 v i c = 10ma (*) notes: (*) measured under pulsed conditions. pulse width 300 s; duty cycle 2%. emitter-base breakdown voltage bv ebo 78.3 vi e = 100 a emitter-collector breakdown voltage (reverse blocking) bv ecx 68.2 vi e = 100 a, r bc < 1k or 0.25v > v bc > -0.25v emitter-collector breakdown voltage (base open) bv eco 4.5 5.3 v i e = 100 a, collector-base cut-off current i cbo <1 50 20 na a v cb = 50v v cb = 50v, t amb = 100c collector-base cut-off current i cex <1 100 na v ce = 50v, r be < 1k or -1v < v be < 0.25v emitter-base cut-off current i ebo <1 50 na v eb = 5.6v collector-emitter saturation voltage v ce(sat) 23 30 mv i c = 1a, i b = 100ma (*) 45 65 mv i c = 1a, i b = 10ma (*) 55 70 mv i c = 2a, i b = 40ma (*) 135 175 mv i c = 7a, i b = 280ma (*) base-emitter saturation voltage v be(sat) 960 1050 mv i c = 7a, i b = 280ma (*) base-emitter turn-on voltage v be(on) 840 950 mv i c = 7a, v ce = 2v (*) static forward current transfer ratio h fe 200 350 500 i c = 0.1a, v ce = 2v (*) 180 340 i c = 2a, v ce = 2v (*) 100 220 i c = 7a, v ce = 2v (*) 45 95 i c = 15a, v ce = 2v (*) transition frequency f t 150 mhz i c = 50ma, v ce = 10v f =50mhz input capacitance c ibo 315 pf v eb = 0.5v, f = 1mhz (*) output capacitance c obo 40 50 pf v cb = 10v, f = 1mhz (*) delay time t d 135 ns v cc =10 v. i c =1a, i b1 = i b2 =10ma. rise time t r 117 ns storage time t s 285 ns fall time t f 88 ns
ZXTN19020CFF issue 1 - february 2007 5 www.zetex.com ? zetex semiconductors plc 2007 typical characteristics
ZXTN19020CFF issue 1 - february 2007 6 www.zetex.com ? zetex semiconductors plc 2007 intentionally left blank
ZXTN19020CFF issue 1 - february 2007 7 www.zetex.com ? zetex semiconductors plc 2007 package outline - sot23f note: controlling dimensions are in millimeters. ap proximate dimensions are provided in inches dim. millimeters inches dim. millimeters inches min. max. min. max. min. max. max. max. a 0.80 1.00 0.0315 0.0394 e 2.30 2.50 0.0906 0.0984 a1 0.00 0.10 0.00 0.0043 e1 1.50 1.70 0.0590 0.0669 b 0.35 0.45 0.0153 0.0161 e2 1.10 1.26 0.0433 0.0496 c 0.10 0.20 0.0043 0.0079 l 0.48 0.68 0.0189 0.0268 d 2.80 3.00 0.1102 0.1181 l1 0.30 0.50 0.0153 0.0161 e 0.95 ref 0.0374 ref r 0.05 0.15 0.0019 0.0059 e1 1.80 2.00 0.0709 0.0787 o 0 12 0 12 d l1 c a1 b r bb e1 e e1 e l a e2
ZXTN19020CFF issue 1 - february 2007 8 www.zetex.com ? zetex semiconductors plc 2007 zetex sales offices europe zetex gmbh kustermann-park balanstra?e 59 d-81541 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia ltd) 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone: (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com ? 2007 published by zetex semiconductors plc definitions product change zetex semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. customers are solely responsible for obtaining th e latest relevant information before placing orders. applications disclaimer the circuits in this design/application note are offered as desi gn ideas. it is the responsibility of the user to ensure that t he circuit is fit for the user?s application and meets with the user?s requirements. no representation or warranty is given and no liability whatsoev er is assumed by zetex with respect to the accuracy or use of such in formation, or infringement of patents or other intellectual prop erty rights arising from such use or otherwise. zetex does not assume any le gal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restricti on or otherwise) for any damages, loss of profit, business, con tract, opportunity or consequential loss in the use of th ese circuit applications, under any circumstances. life support zetex products are specifically not authorized for use as critic al components in life support devices or systems without the ex press written approval of the chief executive officer of zetex semiconductors plc. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in t he labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devi ce or system whose failure to pe rform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. reproduction the product specifications contained in this publication are issu ed to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the pr oducts or services concerned. terms and conditions all products are sold subjects to zetex? terms and conditions of sale, and this disclaimer (save in the event of a conflict bet ween the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. for the latest information on technology, delivery terms and condi tions and prices, please contact your nearest zetex sales off ice. quality of product zetex is an iso 9001 and ts16949 certified semiconductor manufacturer. to ensure quality of service and products we strongly advise the purchase of parts dire ctly from zetex semiconductors or one of our regionally authorized distributors. for a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork zetex semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. esd (electrostatic discharge) semiconductor devices are susceptible to damage by esd. suitab le precautions should be taken when handling and transporting dev ices. the possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. the extent of damage can vary from immediate functional or parametric malfunc tion to degradation of function or performance in use over ti me. devices suspected of being affected should be replaced. green compliance zetex semiconductors is committed to environ mental excellence in all aspects of its op erations which includes meeting or exceed ing reg- ulatory requirements with respect to the use of hazardous substances. numerous successful programs have been implemented to red uce the use of hazardous substances and/or emissions. all zetex components are compliant with the ro hs directive, and through this it is supporting its customers in their compliance with weee and elv directives. product status key: ?preview? future device intended for production at some point. samples may be available ?active? product status recommended for new designs ?last time buy (ltb)? device will be discontinued and last time buy period and delivery is in effect ?not recommended for new designs? device is still in production to support existing designs and production ?obsolete? production ha s been discontinued datasheet status key: ?draft version? this term denotes a very early datasheet ver sion and contains highly provisional information, which may change in any manner without notice. ?provisional version? this term denotes a pre-release datasheet. it provides a clear indication of anticipated performance. however, changes to the test conditions and specif ications may occur, at any time and without notice. ?issue? this term denotes an issued datasheet cont aining finalized specifications. however, changes to specifications may occur, at any time and without notice.
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